InAs/MoRe Hybrid Semiconductor/Superconductor Nanowire Devices

Implementing superconductors capable of proximity-inducing a large energy gap in semiconductors in the presence of strong magnetic fields is a major goal toward applications of semiconductor/superconductor hybrid materials in future quantum information technologies. Here, we study the performance of devices consisting of InAs nanowires in electrical contact with molybdenum-rhenium (MoRe) superconducting alloys. The MoRe thin films exhibit transition temperatures of similar to 10 K and critical fields exceeding 6 T. Normal/superconductor devices enabled tunnel spectroscopy of the corresponding induced superconductivity, which was maintained up to similar to 10 K, and MoRebased Josephson devices exhibited supercurrents and multiple Andreev reflections. We determine an induced superconducting gap lower than expected from the transition temperature and observe gap softening at finite magnetic field. These may be common features for hybrids based on large-gap, type II superconductors. The results encourage further development of MoRe-based hybrids.

Automated summary

In this study, the performance of devices consisting of InAs nanowires in electrical contact with MoRe superconducting alloys was investigated. The MoRe thin films exhibited high transition temperatures and critical magnetic fields, and the devices maintained superconductivity at temperatures up to around 10 K. The MoRe-based Josephson devices showed supercurrents and multiple Andreev reflections. Additionally, the induced superconducting gap was found to be lower than expected and exhibited gap softening at finite magnetic fields.