4.8 Article

Graphene-Based Quantum Hall Interferometer with Self-Aligned Side Gates

期刊

NANO LETTERS
卷 22, 期 23, 页码 9645-9651

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.2c03805

关键词

Graphene; Quantum Point Contacts; Quantum Hall Interferometer; Side Gates

资金

  1. NSF [DMR-2004870]
  2. Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy [DE-SC0002765]
  3. URC grant at Appalachian State University
  4. Elemental Strategy Initiative [JPMXP0112101001]
  5. JSPS KAKENHI [JP20H00354]
  6. CREST (JST) [JPMJCR15F3]
  7. (JST)
  8. National Science Foundation as part of the National Nanotechnology Coordinated Infrastructure (NNCI) [ECCS-1542015]

向作者/读者索取更多资源

The vanishing band gap of graphene has posed challenges for creating high-quality quantum point contacts. However, recent advances have allowed split-gate QPCs to operate using the highly resistive v = 0 state. Researchers have developed a simple method of fabricating QPCs by etching a narrow trench in the graphene sheet, separating the conducting channel from self-aligned graphene side gates. This technique has enabled the creation and study of a quantum Hall interferometer.
The vanishing band gap of graphene has long presented challenges for making high-quality quantum point contacts (QPCs)-the partially transparent p-n interfaces introduced by conventional split gates tend to short circuit the QPCs. This complication has hindered the fabrication of graphene quantum Hall Fabry-Perot interferometers, until recent advances have allowed split-gate QPCs to operate utilizing the highly resistive v = 0 state. Here, we present a simple recipe to fabricate QPCs by etching a narrow trench in the graphene sheet to separate the conducting channel from self-aligned graphene side gates. We demonstrate operation of the individual QPCs in the quantum Hall regime and further utilize these QPCs to create and study a quantum Hall interferometer.

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