Dual-Gate All-Electrical Valleytronic Transistors

The development of integrated circuits (ICs) based on a complementary metal-oxide-semiconductor through transistor scaling has reached the technology bottleneck; thus, alternative approaches from new physical mechanisms are highly demanded. Valleytronics in two-dimensional (2D) material systems has recently emerged as a strong candidate, which utilizes the valley degree of freedom to process information for electronic applications. However, for all-electrical valleytronic transistors, very low room-temperature valley on-off ratios (around 10) have been reported so far, which seriously limits their practical applications. In this work, we successfully illustrated both n-and p-type valleytronic transistor performances in monolayer MoS2 and WSe2 devices, with measured valley on-off ratios improved up to 3 orders of magnitude greater compared to previous reports. Our work shows a promising way for the electrically controllable manipulation of valley degree of freedom toward practical device applications.

Automated summary

By studying valleytronics in two-dimensional materials, we have successfully improved the performances of valleytronic transistors in monolayer MoS2 and WSe2 devices, with valley on-off ratios improved up to three orders of magnitude greater compared to previous reports. This research provides a promising way for the electrically controllable manipulation of valley degree of freedom toward practical device applications.