Metal-Oxide FET Biosensor for Point-of-Care Testing: Overview and Perspective

Metal-oxide semiconducting materials are promising for building high-performance field-effect transistor (FET) based biochemical sensors. The existence of well-established top-down scalable manufacturing processes enables the reliable production of cost-effective yet high-performance sensors, two key considerations toward the translation of such devices in real-life applications. Metal-oxide semiconductor FET biochemical sensors are especially well-suited to the development of Point-of-Care testing (PoCT) devices, as illustrated by the rapidly growing body of reports in the field. Yet, metal-oxide semiconductor FET sensors remain confined to date, mainly in academia. Toward accelerating the real-life translation of this exciting technology, we review the current literature and discuss the critical features underpinning the successful development of metal-oxide semiconductor FET-based PoCT devices that meet the stringent performance, manufacturing, and regulatory requirements of PoCT.

Automated summary

Metal-oxide semiconductor FET-based biochemical sensors have great potential for applications, especially in the development of PoCT devices. However, this technology is currently mainly limited to academia and needs to be translated into real-life applications. Reviewing the literature and discussing critical features can accelerate the successful development of metal-oxide semiconductor FET-based PoCT devices.