4.5 Article

Doping occupancy and defect structure evolution process of Zn (1, 3, 5, 7 mol.%): Dy: LiNbO3 crystals

期刊

MODERN PHYSICS LETTERS B
卷 36, 期 32N33, 页码 -

出版社

WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S0217984922501731

关键词

Dy: LiNbO3; dopant occupancy; infrared spectrum; defect structure; absorption peak

资金

  1. Open Project Funds for the Key Laboratory of Space Photoelectric Detection and Perception (Nanjing University of Aeronautics and Astronautics) [NJ2020021-9]
  2. Natural Science Fund of Heilongjiang Province of China [LH2020E085]
  3. Science Funds for the Young Innovative Talents of HUST
  4. Opening Project of State Key Laboratory of Crystal Material (Shandong University) [KF1906]

向作者/读者索取更多资源

Zn (1, 3, 5, 7 mol.%): Dy: LiNbO3 crystals were prepared using the traditional vertical pull-up method. ICP-AES analysis test showed that the effective segregation coefficients of Zn2+ and Dy3+ decreased with increasing Zn2+ concentration. XRD analysis test revealed that the lattice size first increased and then decreased. IR analysis showed a blue-shifted absorption spectrum with two peaks. Research demonstrated that when the Zn content reached or exceeded the threshold value, a non-intrinsic defect Zn-Li(+) and Zn-Nb(3-) was introduced by replacing NbLi4+, resulting in increased photodamage resistance via charge self-compensating defect groups.
Zn (1, 3, 5, 7 mol.%): Dy: LiNbO3 crystals were prepared by the traditional vertical pull-up method. The effective segregation coefficients of Zn2+ and Dy3+ were found to decrease with increasing Zn2+ concentration using ICP-AES analysis test. The lattice size was found to increase first and then decrease using XRD analysis test. The absorption spectrum was found blue shifted and produced two peaks using IR. Research shows that when the Zn content reaches or exceeds the threshold value, NbLi4+ is replaced completely, and Zn occupies the Li and Nb positions of lithium niobate, thus introducing the non-intrinsic defect Zn-Li(+) and Zn-Nb(3-). Both defects are able to form 3Zn(Li)(+) -Zn-Nb(3-) charge self-compensating defect groups and inhibit the charge transport process and thus will greatly increase the photodamage resistance.

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