4.3 Article

A triple-node upset self-healing latch for high speed and robust operation in radiation-prone harsh-environment

期刊

MICROELECTRONICS RELIABILITY
卷 139, 期 -, 页码 -

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2022.114857

关键词

RHBD latch; Triple node upset; Robustness; Soft error; Self-healing

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With continuous advancement in technology, a novel triple-node-upset self-healing latch is proposed in this study, which performs robust operation in harsh radiation environment. Through simulation validation, it is shown that the proposed latch offers highest speed of operation and has the lowest cost in terms of power-delay-area-product.
With continuous advancement in technology, latches have become highly susceptible to radiation induced soft -errors such as multi-node-upsets (MNU). To effectively resilient the MNUs, this work presents a triple-node-upset (TNU) self-healing (TNUSH) latch, which performs robust operation in harsh radiation environment. The TNUSH latch mainly employs Muller C-elements and is segmented as storage cells, feedback interceptors, and the healer, forming multi-feedback interlocked loops to retain the original data after a radiation event. The self-healing capability of the proposed latch is successfully validated by the fault-injection simulation using Synopsys HSPICE. Simulation results show that the proposed latch offers highest speed of operation and has the lowest cost in terms of the power-delay-area-product (PDAP) among the existing TNU resilient latches. The proposed latch saves up to 26.64 % power and 18.47 % area compared to TNU resilient TNURL, and 92.21 % time and 88.33 % PDAP compared to the TNUTL, which is not resilient to TNU. Robustness of the proposed latch against process, voltage, and temperature variation is further assessed by Monte-Carlo simulations.

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