Multimolecular interactions for SiCXNyOz film formation by parallel plate plasma-enhanced chemical vapor deposition without heat assistance

In order to study the multimolecular interactions for the SiCXNyOz film formation by the parallel plate plasma -enhanced chemical vapor deposition without heat assistance, the fourth-degree polynomial form was effective for the basic terms and their cross terms in the rate equation. The basic terms were defined as the mathematical product of the electric current and partial pressures of monomethylsilane (SiH3CH3), nitrogen and argon gases, such as PSiH3CH3 I, PN2 I and PArI, respectively. The cross terms were the combinations between the basic terms. Finally, the rate equation consisted of the fourth-degree polynomials of the basic and cross terms. The obtained equations could reproduce the film thickness and the concentrations of silicon, carbon, nitrogen and oxygen in the film, with the correlation coefficient higher than 0.99. The fourth-degree polynomials of the basic and cross terms were considered to successfully account for the multimolecular interactions in the plasma. The contri-butions of various experimental parameters to the SiCXNyOz film formation were visualized using contour diagrams.

Automated summary

In this study, the multimolecular interactions in the formation of SiCXNyOz film were investigated using a fourth-degree polynomial form to describe the rate equation. The obtained equations successfully reproduced the film thickness and element concentrations, showing the significance of the cross terms in the plasma. Contour diagrams were used to visualize the contributions of experimental parameters to the film formation.