Dislocation entangled mechanisms in cu-graphene nanocomposite fabricated by high-pressure sintering

Graphene reinforced Cu-based nanocomposite (Cu-Gr), synthesized using high-pressure forming (-8 GPa) route at 300 degrees C, achieved 96% of relative density and 84% IACS improvement in electrical conductivity, along with a significant increase in hardness and Young's modulus up to-94 GPa. The structure and defects evolution of NC -Cu and Cu-Gr nanocomposites were investigated using nanoindentation approach, and then backed up compu-tationally. Molecular dynamics (MD) simulations results are well agreed with experimental data, which signif-icantly reveled that grain growth and grain boundary sliding (GBS) are dominant deformation mechanism involves grain boundary movement through dislocation motion, stacking faults (SFs) and twin boundary (TBs) formation, along with matrix failure through grain growth and GBS with an increase in loading, and subse-quently bending (bow shape) processes.

Automated summary

Graphene reinforced Cu-based nanocomposite (Cu-Gr) synthesized under high-pressure forming (-8 GPa) at 300 degrees C exhibited 96% relative density and an 84% improvement in electrical conductivity (IACS), as well as increased hardness and Young's modulus up to -94 GPa. The structure and defects evolution were investigated using nanoindentation and verified computationally. Molecular dynamics simulations showed consistent results with experiments, revealing that grain growth and grain boundary sliding (GBS) played a dominant role in deformation mechanisms involving dislocation motion, stacking faults (SFs), and twin boundary (TBs) formation, as well as matrix failure through grain growth and GBS with increased load, leading to subsequent bending processes.