期刊
MATERIALS & DESIGN
卷 224, 期 -, 页码 -出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.matdes.2022.111320
关键词
Laser welded-brazed Al; steel interface; In situ SEM observations; Fracture behavior
资金
- National Natural Science Foundation of China [52105405, 52005132]
- China Postdoctoral Science Foundation [2021M702423]
The study investigates the effect of microcrack behavior on the bonding strength of Al/steel interfaces. It is observed that interfaces without or with discontinuous intermetallic compounds have low bonding strength. However, the addition of specific compounds can significantly improve the bonding strength.
Microcracks initiated and propagated behaviors in Al/steel interface determined interfacial bonding strength and this was observed by in situ scanning electron microscopy (SEM) technology. Interface with-out or with discontinuous intermetallic compound (IMC) had low bonding strength owing to insufficient metallurgical bonding. When interface was joined with 2-3 lm serration-shaped s5-Fe1.8Al7.2Si, largest bonding strength of 205 MPa was obtained. Microcracks initiated at protrusion of s5-Fe1.8Al7.2Si and then propagated to s5-Fe1.8Al7.2Si layer and s5-Fe1.8Al7.2Si/Al interface. When interface was joined with 3- 5 lm h-Fe(Al,Si)3 + s5-Fe1.8Al7.2Si, microcracks initiated at root of IMC layers and the interfacial bonding strength was 150 MPa. When interface was joined with 5-10 lm h-Fe(Al,Si)3 + s5-Fe1.8Al7.2Si, microc-racks initiated and propagated along IMC layer. Lower interfacial bonding strength (106 MPa) was pro-duced owing to large lattice mismatch between h-Fe(Al,Si)3 and s5-Fe1.8Al7.2Si, microdefects and higher residual stress. When interface was joined with 10 lm g-Fe2(Al,Si)5 + h-Fe(Al,Si)3 + s5- Fe1.8Al7.2Si, microcracks initiated and propagated along g-Fe2(Al,Si)5 layer or steel/g-Fe2(Al,Si)5 inter-face. Lowest bonding strength (64 MPa) was obtained resulted from pre-generated microcracks in g- Fe2(Al,Si)5 layer, largest residual stress, crystal defects and abnormal aggregation of Si. (c) 2022 Harbin Institute of Technology. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
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