Active Erbium-Doped Silicon Nanoantenna

The development of silicon-based radiative nanostructures is an important step toward silicon-based optoelectronic systems. Here an approach for the fabrication of photoluminescent Er-doped silicon nanoantennas is demonstrated. The combination of electron beam lithography and laser annealing of a thin Er film deposited after fabrication creates an active dielectric nanoantenna operating in the standard telecommunication wavelength range (C-band). Using the multipole decomposition method the geometrical parameters of the silicon nanoparticle when the first-order Mie-resonances are tuned to the erbium emission in C-band range (4I13/2 -> 4I15/2$<^>4I_{13/2}\rightarrow <^>4I_{15/2}$ transition) is calculated. It is observed experimentally that the presence of the Mie-resonances provides enhancement of the photoluminescence intensity up to 40% compared to the non-resonant case. The proposed approach allows for the creation of computational optical chips compatible with existing nanofabrication technologies.

Automated summary

The development of silicon-based radiative nanostructures is a crucial step for silicon-based optoelectronic systems. This study demonstrates a method for fabricating photoluminescent Er-doped silicon nanoantennas. By combining electron beam lithography and laser annealing, an active dielectric nanoantenna operating in the standard telecommunication wavelength range is created. The presence of Mie-resonances enhances the photoluminescence intensity by up to 40% compared to the non-resonant case.