Sympetalous defects in metalorganic vapor phase epitaxy (MOVPE)-grown homoepitaxial β-Ga2O3 films

We report a new type of structural defect in beta-Ga2O3 homoepitaxial thin films grown by metalorganic vapor phase epitaxy, which we have dubbed as sympetalous defects. These consist of a line defect (for example, a nanotube defect) in the underlying substrate combined with a multi-faceted inverted polycrystalline pyramid in the epitaxial film, which may also be decorated with twinned polycrystalline grains. In plan-view atomic force, scanning electron, or optical microscopies, the sympetalous defects appear similar in shape to polygonal etch pits observed for single crystals. Photoluminescence microscopy exposed spots of polarization-dependent luminescence at these defects, different from the single crystal films' luminescence. Furthermore, some of the defects exhibited circular dichroism in their luminescence that we correlated with partial helices formed within the pits by the arrangement of linearly dichroic polycrystalline grains. Finally, the density of sympetalous defects agrees with the etch pit densities of the substrates. Understanding and controlling these defects will be of importance as they modify the local properties of films, affect fabricated device yields, and influence characterization experiments. Published under an exclusive license by the AVS.

Automated summary

We report the discovery of a new type of structural defect in beta-Ga2O3 homoepitaxial thin films, which we call sympetalous defects. These defects consist of a line defect in the substrate combined with a multi-faceted inverted polycrystalline pyramid in the epitaxial film. Photoluminescence microscopy revealed polarization-dependent luminescence and circular dichroism at these defects. Understanding and controlling these defects is important for modifying film properties, affecting device yields, and influencing characterization experiments.