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Jeffrey M. Woodward et al.
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David R. Boris et al.
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Markku Leskela et al.
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Vipin Kumar et al.
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David R. Boris et al.
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Xingcan Feng et al.
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Analysis of InGaN nanodots grown by droplet heteroepitaxy using grazing incidence small-angle X-ray scattering and electron microscopy
J. M. Woodward et al.
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Neeraj Nepal et al.
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Virginia R. Anderson et al.
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Vedran Jovic et al.
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Shibin Krishna et al.
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Jolien Dendooven et al.
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A. Eisenhardt et al.
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Neeraj Nepal et al.
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Burak Tekcan et al.
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C. Frank et al.
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Andreas Winden et al.
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Charles R. Eddy et al.
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J. Dendooven et al.
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H. B. Profijt et al.
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Fulvio Ratto et al.
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Steven T. Christensen et al.
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Gilles Renaud et al.
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S. Nunomura et al.
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Fourier-inversion and wavelet-transform methods applied to X-ray reflectometry and HRXRD profiles from complex thin-layered heterostructures
O. Durand et al.
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SK O'Leary et al.
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O Durand
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Surface chemical modification of InN for sensor applications
H Lu et al.
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AG Bhuiyan et al.
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