相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Drive High Power UVC-LED Wafer into Low-Cost 4-Inch Era: Effect of Strain Modulation
Shangfeng Liu et al.
ADVANCED FUNCTIONAL MATERIALS (2022)
Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
Andrian Kuchuk et al.
NANO RESEARCH (2022)
Ultra-thin AlGaN/GaN HFET with a high breakdown voltage on sapphire substrates
Zhiwen Liang et al.
APPLIED PHYSICS LETTERS (2021)
Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire
Chaker Fares et al.
APPLIED PHYSICS LETTERS (2020)
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
Norman Susilo et al.
APPLIED PHYSICS LETTERS (2018)
Effect of growth temperature on AlN thin films fabricated by atomic layer deposition
Yong Kim et al.
CERAMICS INTERNATIONAL (2018)
Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing
Lu Zhao et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2018)
Surface, structural and optical properties of AlN thin films grown on different face sapphire substrates by metalorganic chemical vapor deposition
Yao Li et al.
APPLIED SURFACE SCIENCE (2018)
A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability
Fanming Zeng et al.
ELECTRONICS (2018)
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Comparative study of threading dislocations in GaN epitaxial layers by nondestructive methods
Cosmin Romanitan et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2017)
High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AIN/PSS Templates
Chenguang He et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Influence of metallic surface states on electron affinity of epitaxial AlN films
Monu Mishra et al.
APPLIED SURFACE SCIENCE (2017)
Initial growth control of GaN on Si with physical-vapor-deposition-AlN seed layer for high-quality GaN templates
Hongbo Wang et al.
APPLIED PHYSICS EXPRESS (2016)
Correlation Between Optical, Morphological, and Compositional Properties of Aluminum Nitride Thin Films by Pulsed Laser Deposition
Jaime Andres Perez Taborda et al.
IEEE SENSORS JOURNAL (2016)
GaN-based light-emitting diodes on various substrates: a critical review
Guoqiang Li et al.
REPORTS ON PROGRESS IN PHYSICS (2016)
GaN MSM UV Photodetector With Sputtered AlN Nucleation Layer
Chun-Kai Wang et al.
IEEE SENSORS JOURNAL (2015)
Origin of faceted surface hillocks on semi-polar (11(2)over-bar2) GaN templates grown on pre-structured sapphire
Yisong Han et al.
JOURNAL OF CRYSTAL GROWTH (2015)
XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
P. Motamedi et al.
APPLIED SURFACE SCIENCE (2014)
Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges
F. Oehler et al.
JOURNAL OF CRYSTAL GROWTH (2013)
GaN-Based Light-Emitting Diode With Sputtered AlN Nucleation Layer
Cheng-Hsiung Yen et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2012)
Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
Mustafa Alevli et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2012)
Effect of deposition temperature on the microstructure and surface morphology of c-axis oriented AlN films deposited on sapphire substrate by RF reactive magnetron sputtering
Xu-Ping Kuang et al.
SUPERLATTICES AND MICROSTRUCTURES (2012)
Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
R. M. Farrell et al.
APPLIED PHYSICS LETTERS (2010)
XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy
Leland Rosenberger et al.
SURFACE AND INTERFACE ANALYSIS (2008)
X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films
VM Kaganer et al.
PHYSICAL REVIEW B (2005)
Characterization of AlN thin films prepared by unbalanced magnetron sputtering
CC Wang et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2004)
Role of oxygen at screw dislocations in GaN
I Arslan et al.
PHYSICAL REVIEW LETTERS (2003)
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire
DG Zhao et al.
APPLIED PHYSICS LETTERS (2003)
Microstructure of heteroepitaxial GaN revealed by x-ray diffraction
R Chierchia et al.
JOURNAL OF APPLIED PHYSICS (2003)
Properties of GaN and related compounds studied by means of Raman scattering
H Harima
JOURNAL OF PHYSICS-CONDENSED MATTER (2002)
In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers
S Figge et al.
JOURNAL OF CRYSTAL GROWTH (2000)
分享论文
