Influence of sputtered AlN buffer on GaN epilayer grown by MOCVD

The ex situ sputtered AlN buffer and GaN epilayer grown on top of it by metalorganic chemical vapor deposition were studied comprehensively by a variety of techniques including atomic force microscope, high resolution x-ray diffraction, Raman and x-ray photoelectron spectroscopy characterizations. It exhibited that the AlN buffer deposited by using sputtering technique could be oxidized with exposure in atmosphere. Such oxidation phenomenon significantly influences the characteristics of GaN epilayer, for example leading to poor surface morphology, high dislocation density, and large compressive stress. This study demonstrated the effect of oxygen impurities on GaN growth and has an important guiding significance for the growth of high-quality III-nitride related materials.

Automated summary

This study comprehensively investigated the ex situ sputtered AlN buffer and GaN epilayer grown by metalorganic chemical vapor deposition. The study revealed that the AlN buffer deposited by sputtering technique could be oxidized in the atmosphere, which significantly affected the characteristics of the GaN epilayer. This finding has important guiding significance for the growth of high-quality III-nitride materials.