Dual Resistive Switching Performance Derived from Ionic Migration in Halide Perovskite Based Memory

Herein, we report an environmentally stable and friendly halide perovskite based resistive random access memory device with an Ag/PMMA/ (PMA)2CuBr4/FTO (PMMA = poly(methyl methacrylate); PMA = C6H5CH2NH3) architecture. The device exhibits the coexistence of two bipolar resistive switching modes, including counterclockwise and clockwise switching characteristics. The devices with both switching modes show stable endurance (>100 cycles) and long retention performance (>104 s). By applying a suitable electrical stimulation, the counterclockwise and clockwise switching behaviors are interconvertible. Furthermore, the Au/PMMA/(PMA)2CuBr4/FTO and Ag/ (PMA)2CuBr4/FTO devices were fabricated to verify the origin of dual resistive switching behaviors. The similar dual resistive switching behaviors after electroforming processes of three types of memory devices suggest that the interconvertible dual resistive switching characteristics could be attributed to the ionic migration in the (PMA)2CuBr4 perovskite layer.

Automated summary

Here, a stable and environmentally friendly halide perovskite-based resistive random access memory device is reported. The device features two bipolar resistive switching modes, counterclockwise and clockwise, with stable endurance and long retention performance. The interconversion of the switching behaviors can be achieved through suitable electrical stimulation, and the ionic migration in the (PMA)2CuBr4 perovskite layer is identified as the origin of the dual resistive switching characteristics.