期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 -, 期 -, 页码 -出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.2c06655
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Investigating materials with topological magnetic structures is important due to fundamental and technological concerns. In this study, we explored the properties of Sb1.9Fe0.1Te2.S-85(0.15) and found a unique combination of disordered glassy phases, competitive FM-AFM interactions, and nontrivial surface state. Our magneto-transport studies revealed the impact of these complicated magnetic phases on the observed anomalous Hall effect. AC susceptibility results showed a shift in freezing temperature, slower dynamics, and evidence of a cluster spin glass state in the system. Additionally, the de Haas-van Alphen (dHvA) oscillation study revealed a rich complexity in the underlying electronic structure with multiple Fermi pockets.
Due to fundamental and technological concerns, investigating materials with topological magnetic structures has always been a focus of significant research. We explored Sb1.9Fe0.1Te2.S-85(0.15) where a unique combination of disordered glassy phases, competitive FM-AFM interactions, and nontrivial surface state coexisted at the same time. We have discussed the impact of those complicated magnetic phases upon the observed AHE in Sb1.9Fe0.1Te2.S-85(0.15) with magneto-transport studies. The AC susceptibility results demonstrate a shift in the freezing temperature with excitation frequency, the comprehensive analysis verifies the slower dynamics, and a nonzero Vogel-Fulcher temperature T-0 suggests cluster spin glass. This, together with an intermediate value of the Mydosh parameter, provides an evidence for the formation of a cluster spin glass state in the present system. Topological frustrated magnets, which can host both magnetic frustrations and Dirac quasi-particles, are highly sought after class of compounds. Furthermore, as seen by the de Haas-van Alphen (dHvA) oscillation study, the fermiology deviates with doping and produces multiple Fermi pockets, revealing a rich complexity in the underlying electronic structure.
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