Fabrication of g-C3N4/SnS2 type-II heterojunction for efficient photocatalytic conversion of CO2

Interfacial coupling of two-dimensional semiconductor materials is an effective option to construct heterojunction for enhancing photocatalytic activity. In this paper, a g-C3N4/SnS2 type-II heterojunction was constructed using an electrostatic self-assembly method. The g-C3N4/SnS2-60 showed a CO yield of 2.54 mu mol g(-1), which was 2.96 and 22.1 times that of the g-C3N4 and SnS2 nanosheets, respectively. The efficient carrier separation efficiency of the composites is mainly derived from the type-II heterojunction structure and the interfacial synergy of the two-dimensional (2D) structure. In addition, the high light response intensity of the g-C3N4/SnS2 composite also had excellent electron excitation and transfer ability. This work provides a new vision for the rational design of 2D heterojunction-based photocatalysts for the study of CO2 reduction.

Automated summary

In this paper, a g-C3N4/SnS2 type-II heterojunction was constructed using an electrostatic self-assembly method. The g-C3N4/SnS2-60 exhibited significantly enhanced CO photocatalytic activity compared to g-C3N4 and SnS2 nanosheets. The efficient carrier separation efficiency of the composites is mainly derived from the type-II heterojunction structure and the interfacial synergy of the two-dimensional (2D) structure. This work provides new insights for the rational design of 2D heterojunction-based photocatalysts.