Investigation of electrical characterization of Al/HfO2/p-Si structures in wide temperature range

We studied the I-V characteristics of Al/HfO2/p-Si structure investigated in a wide temperature range of 80-400 K. The zero-bias barrier height (phi(B)) and ideality factor (n) values were calculated for the structure using thermionic emission theory, and it was observed that the values ranged between 3.88 and 0.28 eV at 80 K and 2.81 and 0.90 eV at 400 K, respectively. T-0 effect value was calculated from straight line fitted to nT-T plot. The fit to the experimental value of nT-T plot was parallel to the ideal Schottky contact line. T-0 effect value of structure was found as 145.34 K. The series resistance values decreasing with increasing temperature were calculated 888.76 omega at 80 K at 5 V and 122.10 omega at 400 K at 5 V. In addition, the energy distribution of interface state density profiles was obtained by considering the effective barrier height depending on the temperature (phi(e)) and the voltage dependence of the ideality factor [n (V)].

Automated summary

In this study, the I-V characteristics of the Al/HfO2/p-Si structure were investigated over a wide temperature range of 80-400 K. The zero-bias barrier height (phi(B)) and ideality factor (n) values were calculated using thermionic emission theory. The T-0 effect value was determined and the series resistance values were calculated. The energy distribution of interface state density profiles was obtained by considering the effective barrier height (phi(e)) and the voltage dependence of the ideality factor [n (V)].