The comparison of structural and electro-optical properties of (In, Yb)2O3 thin films with those of In2O3 and Yb2O3 thin films

The In2O3, Yb2O3, and (In, Yb)(2)O-3 thin films were produced by the ultrasonic spray pyrolysis method. The structural and electro-optical properties of (In, Yb)(2)O-3 thin films were compared with those of In2O3 and Yb2O3 thin films. The crystal structure of (In, Yb)(2)O-3 has been reported to be cubic bixbyite, with a lattice constant of 1.030 nm. It was evaluated that the (In, Yb)(2)O-3 material was a direct ultra-wide bandgap semiconductor with a value of 4.11 eV.

Automated summary

The In2O3, Yb2O3, and (In, Yb)(2)O-3 thin films were prepared using the ultrasonic spray pyrolysis method. The structural and electro-optical properties of (In, Yb)(2)O-3 thin films were compared with those of In2O3 and Yb2O3 thin films. It was found that (In, Yb)(2)O-3 had a cubic bixbyite crystal structure with a lattice constant of 1.030 nm. The (In, Yb)(2)O-3 material was identified as a direct ultra-wide bandgap semiconductor with a value of 4.11 eV.