期刊
JOURNAL OF INSTRUMENTATION
卷 18, 期 1, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1748-0221/18/01/C01009
关键词
Particle tracking detectors; Radiation-hard detectors; Solid state detectors
This paper presents the design and preliminary results of shunt voltage regulator and two different bandgap reference designs for a monolithic High Voltage CMOS (HV-CMOS) sensor in a 150 nm technology node. One design utilizes Bipolar Junction Transistors (BJTs) as the reference element, while the other design exclusively uses MOSFETs.
This paper presents the design and preliminary results of a shunt voltage regulator and two different bandgap reference designs for use with a monolithic High Voltage CMOS (HV-CMOS) sensor in a 150 nm technology node. One bandgap reference design is based on Bipolar Junction Transistors (BJTs) as the reference element of the circuit - the rest of the circuit is entirely designed with Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). The second bandgap reference design makes use of MOSFETs exclusively.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据