High-Performance PbI2 Photodetector Constructed by Electrohydrodynamic Jet-Printing Method

The electrohydrodynamic (EHD) printing method shows advantages of solution-processed fabrication, low cost, and large area deposition in the construction of semiconductor films. Here, a layer and wide bandgap semiconductor lead iodide (PbI2) has been explored and studied by the EHD printing technique. The technique parameters, including solution density, electric field, and printing distance are explored and discussed in detail. A uniform, compact, and pin-hole-free PbI2 film is successfully fabricated. The photodetector constructed on this high-quality PbI2 active layer exhibits excellent photo-response performance. A low dark current of 1.68 pA and an impressive high ON/OFF current ratio higher than 10(3) are obtained. At a low bias of 1 V, the device shows a responsivity of 685 mu A W-1, detectivity of 2.0 x 10(8) Jones, and fast photo-response speed (rise and fall time of 45 and 49 ms), respectively. These results are comparable with the reported works, which suggests that the EHD printing is a potential way of fabricating high-quality semiconductor film and high-performance optoelectronic devices.

Automated summary

The electrohydrodynamic (EHD) printing method is used to fabricate a uniform, compact, and pin-hole-free PbI2 film, which serves as a high-quality active layer for photodetectors. The photodetector exhibits excellent photo-response performance with low dark current, high ON/OFF current ratio, and fast photo-response speed. These results indicate that EHD printing is a promising approach for producing high-quality semiconductor films and high-performance optoelectronic devices.