☆ 4.5 Article

Current-Voltage Characteristics of Pt Metal-based and PtSi Silicide-based n-Si Schottky Diodes over a Wide Measuring Temperature Range

JOURNAL OF ELECTRONIC MATERIALS (2023)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Chemistry, Multidisciplinary

The structural and optical properties of GO: Temperature-dependent analysis of the electrical properties of Al/GO/p-type Si semiconductor structures

Niyazi Berk et al.

Summary: The study examined the temperature-dependent electrical characteristics of graphene oxide thin films on p-type silicon. Two Gaussian distributions were observed for barrier height and ideality factor at different temperature ranges on the metal-semiconductor structures. The Richardson constant values varied significantly and approached the theoretical value for p-type silicon in one of the temperature regions.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS (2022)

添加到收藏夹

Article Chemistry, Physical

Enhanced Efficiency of Graphene-Silicon Schottky Junction Solar Cell through Pyramid Arrays Texturation

Cheng Li et al.

Summary: This study systematically investigated the effects of TMAH concentration, IPA concentration, and etching time on SiPa and successfully applied uniform and reliable SiPa to Gr/Si solar cells. The Gr/SiPa devices showed higher power conversion efficiency compared to Gr/Si solar cells.

SILICON (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

Temperature dependence of electrical behaviour of inhomogeneous Ni/Au/4H-SiC Schottky diodes

J. Osvald et al.

Summary: The temperature dependence of electrical parameters of Ni/Au/4H-SiC Schottky diodes was studied in a small temperature interval, revealing barrier height inhomogeneity, decreasing barrier height and standard deviation with increasing temperature, and increasing series resistance with temperature that leads to a crossing point in the I-V curves.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

Current-voltage-measurement temperature characteristics depending on the barrier-forming contact metal thickness in Au/Cu/n-Si/Au-Sb/Ni rectifying contacts

Hasan Efeoglu et al.

Summary: This study experimentally investigates the current-voltage-temperature characteristics of different Au/Cu/n-Si Schottky-barrier diodes with varying copper thickness. The results show that the Schottky barrier height increases with decreasing copper thickness, while the average series resistance and ideality factor are almost independent of the thickness. These findings highlight the importance of copper thickness in determining the quality of the diodes.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

Analysis of I-V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy

Slimane Oussalah et al.

Summary: This study investigates the effect of temperature on the electrical characteristics of Au/Ti on Beryllium-doped Al0.29Ga0.71As Schottky diodes. The analysis of the forward and reverse current-voltage characteristics reveals the dependence of key electronic parameters on temperature, which is attributed to the spatial inhomogeneity at the metal-semiconductor interface. A Gaussian distribution of the barrier heights at the interface successfully explains this inhomogeneity.

MICROELECTRONICS JOURNAL (2022)

添加到收藏夹

Article Materials Science, Multidisciplinary

Photoelectric, optical and microstructural characterization of thin palladium silicide (Pd2Si) layers fabricated by magnetron sputtering from a stoichiometric target

K. Piskorski et al.

Summary: In this study, thin Pd2Si layers were fabricated using magnetron sputtering deposition, and their properties were extensively studied using spectroscopic ellipsometry and various microscopy techniques, providing essential information about the optical parameters, microstructure, and electron energy levels of the layer.

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

Improved rhenium Schottky diodes to n-type gallium nitride

Alex Molina et al.

Summary: This study investigates the electrical characteristics of Rhenium deposited by electron-beam evaporation and sputtering for Schottky contacts to n-type gallium nitride. The results show that the choice of deposition method and annealing conditions can greatly affect the performance of the contacts.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing

Kadir Ejderha et al.

Summary: Ni/n-GaP/Al Schottky diodes were fabricated and annealed at 400 degrees C to achieve optimal performance, resulting in higher barrier heights and lower series resistance compared to the as-deposited diodes. The anomalies in diode parameters were successfully explained by modified thermionic emission current equations based on a Gaussian distribution of temperature-dependent barrier heights.

JOURNAL OF ELECTRONIC MATERIALS (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Current-voltage characteristics of iron-implanted silicon based Schottky diodes

J. O. Bodunrin et al.

Summary: Through current-voltage measurements on Fe doped n-Si, it was found that Fe doping can change the electrical properties of diodes, transforming their behavior from exponential to ohmic. In addition, the density of defect levels increased with Fe implantation fluence, leading to changes in the diode conduction mechanism.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2021)

添加到收藏夹

Article Physics, Condensed Matter

Optimal identification of Be-doped Al0.29Ga0.71As Schottky diode parameters using Dragonfly Algorithm: A thermal effect study

Walid Filali et al.

Summary: In this study, the Dragonfly Algorithm was used for the first time to investigate the temperature effect on Schottky diode electrical parameters. The analysis of I-V-T and C-V characteristics showed high efficiency in accurately determining the parameters and investigating their temperature dependency. The well fit between predicted and measured current characteristics highlighted the effectiveness of this method.

SUPERLATTICES AND MICROSTRUCTURES (2021)

添加到收藏夹

Article Chemistry, Physical

Conduction Mechanisms in Au/0.8 nm-GaN/n-GaAs Schottky Contacts in a Wide Temperature Range

Hicham Helal et al.

Summary: Au/0.8 nm-GaN/n-GaAs Schottky diodes show good electrical characteristics, with the disadvantage of nitridation treatment causing an inhomogeneous barrier height.

MATERIALS (2021)

添加到收藏夹

Article Physics, Multidisciplinary

Thermal sensitivity from current-voltage-measurement temperature characteristics in Au/n-GaAs Schottky contacts

Abdulmecit Turut et al.

Summary: The current-voltage-temperature (I-V-T) characteristics of Au/n-GaAs/In Schottky barrier diodes (SBDs) were measured to study their thermal sensitivity mechanism under different constant current levels. The SBD showed high and decisive thermal sensitivity up to a current level of 0.10 pA with excellent linear behavior in bias voltage-temperature (V-T) curves. The thermal sensitivity coefficient alpha decreased from 3.42 mV/K at 0.10 pA to 1.31 mV/K at 10 mA, indicating a crucial key factor in determining the performance of a good thermal sensor.

TURKISH JOURNAL OF PHYSICS (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary

Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) β-Ga2O3 Schottky barrier diode

P. R. Sekhar Reddy et al.

VACUUM (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range

A. Turut et al.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

Thermometric SOI lateral diodes for bolometric application: Comparison between Schottky and p-i-n diodes

Jeremy Blond et al.

SOLID-STATE ELECTRONICS (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

The origin of constant phase element in equivalent circuit of MIS (n) GaAs structures

Lukasz Drewniak et al.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2020)

添加到收藏夹

Article Physics, Applied

Gaussian Thermionic Emission Model for Analysis of Au/MoS2 Schottky-Barrier Devices

Calvin Pei Yu Wong et al.

PHYSICAL REVIEW APPLIED (2020)

添加到收藏夹

Review Physics, Multidisciplinary

On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Abdulmecit Turut

TURKISH JOURNAL OF PHYSICS (2020)

添加到收藏夹

Article Materials Science, Multidisciplinary

Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range

V. E. Gora et al.

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (2019)

添加到收藏夹

Article Physics, Condensed Matter

Features of current transport in Schottky diodes with additional electric field

R. K. Mamedov et al.

SUPERLATTICES AND MICROSTRUCTURES (2019)

添加到收藏夹

Article Engineering, Electrical & Electronic

Effect of thermal annealing for W/β-Ga2O3 Schottky diodes up to 600 °C

Minghan Xian et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2019)

添加到收藏夹

Article Engineering, Electrical & Electronic

Effectuality of Barrier Height Inhomogeneity on the Current-Voltage-Temperature Characteristics of Metal Semiconductor Structures with CdZnO Interlayer

Ilke Tascioglu et al.

JOURNAL OF ELECTRONIC MATERIALS (2018)

添加到收藏夹

Article Physics, Applied

Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior

G. Brezeanu et al.

JOURNAL OF APPLIED PHYSICS (2017)

添加到收藏夹

Article Physics, Condensed Matter

Influence of Al2O3 barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures

Abdulkerim Karabulut et al.

JOURNAL OF SEMICONDUCTORS (2017)

添加到收藏夹

Article Chemistry, Physical

Synthesis and thermal stability of Pt3Si, Pt2Si, and PtSi films grown by e-beam co-evaporation

Robert T. Fryer et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2016)

添加到收藏夹

Article Engineering, Electrical & Electronic

Electronic Transport of an Ni/n-GaAs Diode Analysed Over a Wide Temperature Range

A. Guzel et al.

JOURNAL OF ELECTRONIC MATERIALS (2016)

添加到收藏夹

Article Physics, Multidisciplinary

Effect of oxygen plasma treatment on the electrical characteristics of Pt/n-type Si Schottky diodes

V. Janardhanam et al.

JOURNAL OF THE KOREAN PHYSICAL SOCIETY (2016)

添加到收藏夹

Review Materials Science, Multidisciplinary

Embedded Nanoparticles in Schottky and Ohmic Contacts: A Review

Mohammad Saleh Gorji et al.

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES (2015)

添加到收藏夹

Article Engineering, Electrical & Electronic

Schottky barrier height engineering of Al contacts on Si by embedded Au nanoparticles

Mohammad Saleh Gorji et al.

MICROELECTRONIC ENGINEERING (2015)

添加到收藏夹

Article Engineering, Electrical & Electronic

Diameter dependent thermal sensitivity variation trend in Ni/4H-SiC Schottky diode temperature sensors

Vibhor Kumar et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2015)

添加到收藏夹

Article Engineering, Electrical & Electronic

In Situ Investigation of Current Transport Across Pt/n-Si (100) Schottky Junction During 100 MeV Ni+7 Ion Irradiation

Shammi Verma et al.

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2013)

添加到收藏夹

Article Engineering, Electrical & Electronic

Current-voltage characteristics of Schottky diode simulated using semiconductor device equations

Priyanka Kaushal et al.

INTERNATIONAL JOURNAL OF ELECTRONICS (2013)

添加到收藏夹

Article Engineering, Electrical & Electronic

The electrical characteristics of Ni/n-GaSb Schottky diode

Wen-Chang Huang et al.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2013)

添加到收藏夹

Article Engineering, Electrical & Electronic

A detailed study on current-voltage characteristics of Au/n-GaAs in wide temperature range

E. Ozavci et al.

SENSORS AND ACTUATORS A-PHYSICAL (2013)

添加到收藏夹

Article Materials Science, Multidisciplinary

Analysis of temperature dependent electrical properties of Au/perylene-diimide/n-Si Schottky diodes

O. F. Yuksel et al.

THIN SOLID FILMS (2013)

添加到收藏夹

Article Physics, Applied

Inhomogeneous ohmic contacts: Barrier height and contact area determination

Yang Li et al.

APPLIED PHYSICS LETTERS (2012)

添加到收藏夹

Proceedings Paper Engineering, Electrical & Electronic

Barrier inhomogeneities of a medium size Mo/4H-SiC Schottky diode

Muhammad Yousuf Zaman et al.

HETEROSIC & WASMPE 2011 (2012)

添加到收藏夹

Article Engineering, Electrical & Electronic

Thermionic Field Emission Explanation for Nonlinear Richardson Plots

Crystal Kenney et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)

添加到收藏夹

Article Engineering, Electrical & Electronic

High performance platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 30 nm

Myungsim Jun et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2011)

添加到收藏夹

Article Physics, Applied

Mechanism of surface leakage of nanoscale Schottky contacts between ErSi2 nanoislands and Si(001)

J. Q. Song et al.

APPLIED PHYSICS LETTERS (2010)

添加到收藏夹

Article Nanoscience & Nanotechnology

Effect of interfacial layer and series resistance on electrical characteristics for the PtSi/p-SiNWs Schottky diode

Meiguang Zhu et al.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2010)

添加到收藏夹

Article Physics, Condensed Matter

Effect of the periphery of metal-semiconductor contacts with Schottky barriers on their static current-voltage characteristic

N. A. Torkhov

SEMICONDUCTORS (2010)

添加到收藏夹

Article Engineering, Electrical & Electronic

Effective mobility characteristics of platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistor

Moongyu Jang et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2010)

添加到收藏夹

Article Engineering, Electrical & Electronic

Inhomogeneous Ni/Ge Schottky barriers due to variation in Fermi-level pinning

X. V. Li et al.

MICROELECTRONIC ENGINEERING (2009)

添加到收藏夹

Article Physics, Applied

Temperature dependence of electrical characteristics of Cr/p-Si(100) Schottky barrier diodes

K. Erturk et al.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B (2008)

添加到收藏夹

Article Engineering, Electrical & Electronic

Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC

A. Ferhat Hamida et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2008)

添加到收藏夹

Article Physics, Applied

The behavior of the I-V-T characteristics of inhomogeneous (Ni/Au)-Al0.3Ga0.7N/AlN/GaN heterostructures at high temperatures

Z. Tekeli et al.

JOURNAL OF APPLIED PHYSICS (2007)

添加到收藏夹

Article Crystallography

Effect of temperature and inhomogeneity on the yield of PtSi-n-Si photodetectors

A Sellai et al.

JOURNAL OF CRYSTAL GROWTH (2006)

添加到收藏夹

Article Chemistry, Physical

Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes

E Ayyildiz et al.

APPLIED SURFACE SCIENCE (2005)

添加到收藏夹

Article Materials Science, Multidisciplinary

Metal silicides: An integral part of microelectronics

LJ Chen

JOM (2005)

添加到收藏夹

Article Engineering, Electrical & Electronic

Temperature dependence of electrical parameters of the Au/n-InP Schottky barrier diodes

H Cetin et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2005)

添加到收藏夹

Article Chemistry, Physical

Theoretical study of the temperature dependence of electrical characteristics of Schottky diodes with an inverse near-surface layer

J Osvald et al.

APPLIED SURFACE SCIENCE (2004)

添加到收藏夹

Article Chemistry, Physical

Gaussian distribution of inhomogeneous barrier height in Ag/p-Si (100) Schottky barrier diodes

S Acar et al.

APPLIED SURFACE SCIENCE (2004)

添加到收藏夹

Article Materials Science, Multidisciplinary

Effects of annealing processing on morphological, compositional and Schottky characterization of PtSi/Si diodes

MC Li et al.

MATERIALS LETTERS (2003)

添加到收藏夹

Article Physics, Condensed Matter

Correlation between barrier heights and ideality factors of Cd/n-Si and Cd/p-Si Schottky barrier diodes

K Akkiliç et al.

SOLID STATE COMMUNICATIONS (2003)

添加到收藏夹

Article Physics, Applied

Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on n-type molecular-beam epitaxy GaAs

A Gumus et al.

JOURNAL OF APPLIED PHYSICS (2002)

添加到收藏夹

Review Materials Science, Multidisciplinary

Recent advances in Schottky barrier concepts

RT Tung

MATERIALS SCIENCE & ENGINEERING R-REPORTS (2001)

添加到收藏夹

Article Physics, Applied

Barrier height determination in homogeneous nonideal Schottky contacts

MP Hernández et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2001)

添加到收藏夹

Article Physics, Applied

Thermal stability of Pt Schottky contacts to 4H-SiC

I Shalish et al.

JOURNAL OF APPLIED PHYSICS (2000)

添加到收藏夹

Article Engineering, Electrical & Electronic

Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)

SY Zhu et al.

SOLID-STATE ELECTRONICS (2000)

添加到收藏夹

Article Engineering, Electrical & Electronic

Characterization of shallow silicided junctions for sub-quarter micron ULSI technology - Extraction of silicidation induced Schottky contact area

HD Lee

IEEE TRANSACTIONS ON ELECTRON DEVICES (2000)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.