Current-Voltage Characteristics of Pt Metal-based and PtSi Silicide-based n-Si Schottky Diodes over a Wide Measuring Temperature Range

We have compared the I-V-T characteristics of the metal-based Pt/n-Si and silicide-based PtSi/n-Si Schottky barrier (SB) diodes in the temperature range of 40-320 K. The results revealed that the silicide-based diode (6.00 omega at 40 K to 6.50 omega at 320 K) has lower series resistance R-s values than those of the metal-based diode (7.10 omega at 40 K to 8.50 omega at 320 K). Again, the SB height values of 0.806 eV and 0.875 eV for the metal-based and silicide-based SB diodes, respectively, have been obtained at 300 K, which are consistent with the values in the literature. The lower R-s and higher SB height obtained for the silicide-based PtSi/n-Si diode is a clear evidence for the use of the metal silicide instead of metal for the device performance and reliability in Si technology. Furthermore, the I-V curves of the silicide-based diode have shown a double slope separated by a transition segment at temperatures below 170 K.

Automated summary

The I-V-T characteristics of metal-based Pt/n-Si and silicide-based PtSi/n-Si Schottky barrier (SB) diodes were compared in the temperature range of 40-320 K. The silicide-based diode exhibited lower series resistance (R-s) values (6.00 ohm at 40 K to 6.50 ohm at 320 K) than the metal-based diode (7.10 ohm at 40 K to 8.50 ohm at 320 K). The SB height values of the metal-based and silicide-based SB diodes were 0.806 eV and 0.875 eV, respectively, at 300 K, which matched the literature values. The silicide-based PtSi/n-Si diode's lower R-s and higher SB height provide clear evidence for its superior performance and reliability in Si technology. Additionally, the I-V curves of the silicide-based diode exhibited a double slope separated by a transition segment at temperatures below 170 K.