期刊
ADVANCED MATERIALS
卷 27, 期 48, 页码 8067-8074出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201504534
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- U.S. Department of Energy, Office of Basic Energy Sciences [DE-FG02-07ER46394]
The temperature dependence of the piezotronic and piezophototronic effects in a-axis GaN nanobelts from 77 to 300 K is investigated. The piezotronic effect is enhanced by over 440% under lower temperatures. Two independent processes are discovered to form a competing mechanism through the investigation of the temperature dependence of the piezophototronic effect in a-axis GaN nanobelts.
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