期刊
JOURNAL OF CRYSTAL GROWTH
卷 603, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2022.127037
关键词
A1; Doping; A2; Growth from melt; Zone melting; B1; Zinc compounds; Selenium compounds; B2; Semiconducting II-VI materials
ZnSe: Cr2+ crystals were grown with concentrations of 5.1017, 1018, and 1019 cm-3 using a high-pressure vertical zone melting technique. Infrared transmittance measurements indicated a noticeable variation in the distribution of Cr2+ ions along the as-grown crystals. The effective segregation coefficients of Cr2+ ions were calculated, and their dependence on concentration was approximated.
ZnSe : Cr2+ crystals were grown using a high-pressure vertical zone melting technique with concentrations of 5.1017, 1018, and 1019 cm-3. Infrared transmittance measurements showed a noticeable change in the Cr2+ ions distribution along the as-grown crystals. The effective segregation coefficients of Cr2+ ions were calculated and their dependence on concentration was approximated.
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