期刊
ADVANCED MATERIALS
卷 27, 期 45, 页码 7412-7419出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201502404
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资金
- Department of Energy Office of Basic Energy Sciences [DE-SC0002368]
- Department of Energy [DE-FG02-08ER46535]
- WPI AIMR-CNSI joint center at the University of California, Santa Barbara
- U.S. Department of Energy (DOE) [DE-FG02-08ER46535] Funding Source: U.S. Department of Energy (DOE)
FDT and FDT-Br diradicaloids with stable coexisting close-shell and open-shell forms exhibit unconventional self-doping behavior in solid-state electronic devices that is temperature (T) tunable and reversible. The doping is strengthened by the increased T, leading to the absence of off-states (I-off) in the transistors.
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