Long term retention in δ-PVDF thin film prepared by rapid ice quenching technique

Ferroelectric delta-phase comprising polyvinylidene fluoride (delta-PVDF) thin films are prepared via spin-coating followed by high-temperature annealing and rapid ice quenching, where, the requirement of a high electric field (similar to MV/m) is circumvented. Herein, ferroelectric responses, that is, write, erase, and read pulses on as prepared delta-PVDF thin film, have been demonstrated through piezoresponse force microscopy (PFM). A metal-ferroelectric-insulator-semiconductor (MFIS) diode containing delta-PVDF has shown a capacitance-voltage (C-V) hysteresis with a notable memory window of 7.5 V up to a temperature of 140 degrees C, overcoming lower fatigue temperatures, limited by Curie transition in co-polymer P(VDF-TrFE). A very stable polarization state is reflected by a holding period of a capacitance state of 10 h, where only a 5% loss of its initial value is noticed. The excellent ferroelectric response and retention behavior of the delta-PVDF thin film may open up new opportunities in the field of high-endurance non-volatile memories.

Automated summary

Ferroelectric delta-phase polyvinylidene fluoride (delta-PVDF) thin films were prepared through spin-coating, annealing, and ice quenching without the need for high electric fields. The ferroelectric responses of the delta-PVDF thin film, including write, erase, and read pulses, were demonstrated using piezoresponse force microscopy (PFM). A metal-ferroelectric-insulator-semiconductor (MFIS) diode containing delta-PVDF showed a significant hysteresis in capacitance-voltage (C-V) with a memory window of 7.5 V at a temperature of 140 degrees C, surpassing the lower fatigue temperatures of P(VDF-TrFE) co-polymer limited by Curie transition. The delta-PVDF thin film exhibited excellent ferroelectric response and retention behavior, providing new opportunities for high-endurance non-volatile memories.