4.6 Article

Effects of excess electrons/holes on fracture toughness of single-crystal Si

期刊

JOURNAL OF APPLIED PHYSICS
卷 133, 期 3, 页码 -

出版社

AIP Publishing
DOI: 10.1063/5.0123580

关键词

-

向作者/读者索取更多资源

This study demonstrates that injecting excess electrons or holes into a material by electron beam irradiation can enhance bond strength. Experimental and computational results show that the increase in fracture toughness is more significant under hole-injection conditions.
This study demonstrates that bond strength can be enhanced by injecting excess electrons or holes into a material by electron beam irradiation. To determine the effect of excess electrons/holes on the interatomic bond strength, fracture toughness tests were performed on single-crystal Si micropillars under various electron-beam irradiation conditions. The fracture toughness under electron beam irradiation was 4%-11% higher than that under non-irradiated conditions. In particular, an increase in strength was large in tests performed under hole-injection conditions. Furthermore, in first-principles calculations of the tensile strength of excess electrons/hole-doped Si, the ideal tensile strength monotonically decreased with an injection in excess electrons and increased monotonically with the injection of holes. This is qualitatively consistent with the experimental result that the fracture toughness increases under hole-injection conditions.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据