4.7 Article

The enhanced n-butanol sensing performance of In2O3 loaded NiO cuboid heterostructure

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JOURNAL OF ALLOYS AND COMPOUNDS
卷 930, 期 -, 页码 -

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ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2022.167483

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NiO/In2O3; Microwave synthesis; Nickel foam; Heterojunction; Volatile organic compounds; Gas sensor

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Monitoring VOCs is crucial for human health, and semiconductor gas sensors are a promising strategy for detection. This study synthesized NiO/In2O3 heterostructure using innovative methods and investigated its performance as a gas sensor for detecting VOCs. NiO/In2O3 showed superior selectivity, stability, and sensitivity in detecting n-butanol due to the p-n heterojunction and increased adsorption sites.
Monitoring volatile organic compounds (VOCs) quickly and on-site is essential for preserving human health. The semiconductor gas sensor has been a promising strategy for detecting VOCs. However, stability, selectivity, and sensitivity are crucial for the practical application of a gas-sensor material. Innovative synthetic methods have been studied to improve the properties of sensor materials, such as better detection and stability and the construction of p-n heterojunction materials. In this work, NiO/In2O3 heterostructure was synthesized by fast microwave-assisted solvothermal (MAS) using nickel foam and indium nitrate and was studied as a gas sensor for detecting several VOCs. NiO/In2O3 has the combined properties of NiO, a ptype material, and of In2O3, an n-type. NiO/In2O3 presented a superior performance for detecting n-butanol at the ideal operating temperature (350 degrees C), with a fast response (6 s), good selectivity, and stability. The nButanol response at 100 ppm was R-a/R-g = 412 +/- 16, and a linear detection range from 1 to 200 ppm was achieved. The best sensing response for this material towards n-butanol is attributed to the electron depletion layer caused by NiO/In2O3 junction and more adsorption sites obtained during fast MAS synthesis. (c) 2022 Elsevier B.V. All rights reserved.

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