Zn3In2S6 quantum dots modified transparent Cu2O films/TiO2 orderly nanoarrays pn junction towards photovoltaic conversion enhancement

The transparent Cu2O film/Zn3In2S6 QDs/TiO2 orderly nanoarrays pn junction has been prepared via a continuous hydrothermal-co-precipitation-sputtering method. As revealed, the as-prepared Cu2O/Zn3In2S6 QDs/TiO2 transparent pn junction (Cu2O/ZIS-3-TiO2) exhibits highly transmittance of similar to 85%, obvious photovoltaic conversion enhancement of similar to 1.2 x 103 folds (IPCE of 1.17%) than intrinsic Cu2O/TiO2 pn junction, and decent stability during 40000s ' continuous cycle, which can be mainly ascribed to that, the Zn3In2S6 QDs with appropriate Fermi level, high quantum yields and wide band gap, can optimize the photo-generated carrier concentration-mobility kinetic equilibrium efficiently, while maintaining a high transparency. Additionally, TiO2 orderly nanoarrays can provide carrier transportation pathway, increase solar efficiency and physical stability.

Automated summary

A transparent Cu2O/ZIS-3-TiO2 pn junction with high transmittance and significant enhancement in photovoltaic conversion efficiency has been prepared. This is achieved by using Zn3In2S6 quantum dots with appropriate Fermi level, high quantum yields, and wide band gap, as well as orderly TiO2 nanoarrays providing carrier transportation pathway.