GaN-Djoser Pyramidal Self Powered UV Photodetector for Optical Signal Detection in Rugged Environments

Wireless communication under harsh environment using ultraviolet radiation remains a vital field of re-search. We have reported the novel GaN pyramids of Djoser ultraviolet photodetector operable at high -temperature conditions. The GaN-pyramids of Djoser ultraviolet photodetector display extremely high performance, detect weak optical signals and display self-powered behavior even under challenging con-ditions. GaN-pyramids of Djoser was grown via modulating flux ratio (Ga/N) in molecular beam epitaxy. Two-terminal asymmetric Pt electrodes metal semiconductor metal-ultraviolet photodetector were fabri-cated for better thermal stability and low dark current. The device exhibits high responsivity of 11.1 x 103 mAW-1 at RT and 5.6 x 103 mAW-1 at 250 degrees C with a fast response time of -200 mu s in self-power mode. In photoconductive mode, the device demonstrates very high responsivity -2.5 x 107 mAW-1, high detectivity (1012 Jones) at a weak optical signal, while the device shows very high responsivity-1 x 107 mAW-1 at 250 degrees C. The extraordinary performance of the device is attributed to its unique Djoser-pyramidal structure with decreased surface stress and dislocations. The self-powered device with significantly high responsivity and capability to detect weak optical signals demonstrates the feasibility of a highly efficient photoreceiver design of GaN-pyramids of Djoser for ultraviolet communication, which can work under harsh environ-mental conditions. (c) 2022 Elsevier B.V. All rights reserved.

Automated summary

This study presents a novel GaN pyramids of Djoser ultraviolet photodetector that operates at high temperature and demonstrates high performance, including the ability to detect weak optical signals and exhibit self-powered behavior. The device's unique Djoser-pyramidal structure contributes to its extraordinary performance, providing decreased surface stress and dislocations.