Statistical modeling of V th distribution in ovonic threshold switches based on physical switching models

This paper discusses the statistical modeling of the V (th) distribution of an ovonic threshold switch, an integral component of high-speed, high-capacity storage-class memory. A distribution function that explains the V (th) variation and a method for estimating and judging it is proposed based on three representative switching mechanisms-thermal runaway model, physically based electrical model, and two-state defect model. We examined the relationship between the segment V (th) distribution and V (th) minimum distribution is examined by considering chip-level scaling in Monte Carlo simulations and analytical analysis of the distribution function. The latter distribution approaches the Weibull distribution; however, its convergence speed differs.

Automated summary

This paper discusses the statistical modeling of the V (th) distribution of an ovonic threshold switch, and proposes a distribution function that explains the V (th) variation and a method for estimating and judging it, based on three representative switching mechanisms. The relationship between the segment V (th) distribution and V (th) minimum distribution is examined through Monte Carlo simulations and analytical analysis, showing that the latter approaches the Weibull distribution with different convergence speed.