Structural design of BaSi2 solar cells with a-SiC electron-selective transport layers

Sputter-deposited polycrystalline BaSi2 films capped with a 5 nm thick a-SiC layer showed high photoresponsivity. This means that the a-SiC layer functions as a capping layer to prevent surface oxidation of BaSi2. Based on the measured absorption edge, the electron affinity of the a-SiC layer, and the work function of the TiN layer, the a-SiC is considered to act as an electron transport layer (ETL) for the BaSi2 light absorber layer/a-SiC interlayer/TiN contact structure in a BaSi2 solar cell. Using a 10 nm thick p(+)-BaSi2 layer as a hole transport layer, we investigated the effect of the BaSi2/a-SiC layered structure on the device performance of a BaSi2-pn homojunction solar cell by a one-dimensional device simulator (AFORS-HET v2.5). The a-SiC ETL effectively separates photogenerated carriers and allows transport of electrons while blocking holes to achieve an efficiency of 22% for a 500 nm thick BaSi2 light absorber layer.

Automated summary

Sputter-deposited polycrystalline BaSi2 films capped with a 5 nm thick a-SiC layer exhibited high photoresponsivity, indicating that the a-SiC layer acts as a capping layer to prevent surface oxidation of BaSi2. The a-SiC layer is considered as an electron transport layer (ETL) in the BaSi2 light absorber layer/a-SiC interlayer/TiN contact structure, based on the measured absorption edge, electron affinity, and work function of the respective layers. Using a 10 nm thick p(+)-BaSi2 layer as a hole transport layer, the BaSi2/a-SiC layered structure significantly affects the performance of a BaSi2-pn homojunction solar cell, achieving an efficiency of 22% for a 500 nm thick BaSi2 light absorber layer, as predicted by a one-dimensional device simulator (AFORS-HET v2.5).