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Electrolyte-gated synaptic transistors for brain-inspired computing

期刊

JAPANESE JOURNAL OF APPLIED PHYSICS
卷 62, 期 SE, 页码 -

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IOP Publishing Ltd
DOI: 10.35848/1347-4065/acaca4

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artificial synapse; neuromorphic electronics; electrolyte-gated synaptic transistor; neuromorphic computing

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The limitations of von Neumann computing systems have been addressed by utilizing neuromorphic devices, particularly electrolyte-gated synaptic transistors (EGSTs), which operate through ion movement in electrolytes. EGSTs are desirable for neuromorphic computing due to their efficient energy consumption and biocompatibility. Recent studies on EGSTs can be classified into four main categories: synaptic plasticity, fast switching speed, low energy consumption, and biocompatibility. To extend the applications of EGSTs, additional requirements and limitations need to be addressed.
The limitations of von Neumann computing systems in terms of information processing speed and energy consumption were overcome using neuromorphic devices. Among these devices, electrolyte-gated synaptic transistors (EGSTs) operated through the movement of ions in electrolytes are suitable devices for neuromorphic computing owing to their efficient energy consumption and biocompatibility. Herein, we explain the basic operating principle of EGSTs and then classify recent studies into four main characteristics: synaptic plasticity, fast switching speed, low energy consumption, and biocompatibility. Finally, we address additional requirements that should be satisfied and limitations that should be overcome for various and expanded applications of EGSTs.

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