期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 62, 期 SC, 页码 -出版社
IOP Publishing Ltd
DOI: 10.35848/1347-4065/aca67e
关键词
MoTe2; laser irradiation; vacancy; heavy doping; polarity control; contact doping
This study presents a simple and controllable heavy doping method for 2H-MoTe2 crystal via high-density laser irradiation. The polarity of the doping can be controlled by changing the irradiation environment. Good performance with enhanced contact properties was achieved for MoTe2-nFET using the contact doping method via laser irradiation in a vacuum environment.
The doping technique is vital for applying two-dimensional (2D) materials such as transition metal dichalcogenide (TMDC)-based field effect transistors (FETs), which can control the channel polarity and improve the performance. However, as conventional doping techniques for silicon-based FET are not suitable for 2D materials, the realization of heavy doping of TMDC materials is challenging, especially for n-type heavy doping. This study reports a simple, regioselective, controllable, and chemically stable heavy doping method for 2H-MoTe2 crystal via high-density laser irradiation. The polarity of the doping can be controlled by changing the irradiation environment. For the MoTe2-nFET, good performance with enhanced contact properties was obtained using the contact doping method via laser irradiation in a vacuum environment.
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