期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 62, 期 1, 页码 -出版社
IOP Publishing Ltd
DOI: 10.35848/1347-4065/acb0b3
关键词
beta-Ga2O3; self-aligned lithography; backside-exposure lithography
In this study, a patterned metal on a beta-Ga2O3 substrate surface was used as an embedded photomask to demonstrate the applicability of backside-exposure lithography to beta-Ga2O3 substrates. Self-aligned photoresist patterning, lift-off, and etching processes were demonstrated for an AZ5214E photoresist in both the positive and negative processing modes. The findings suggest that backside-exposure photolithography is a promising fabrication approach for future beta-Ga2O3-based devices.
beta-Ga2O3 has not been patterned using backside-exposure lithography, despite its high potential applications in future power electronics and its transparency to conventional lithography light sources. Here, a patterned metal on a beta-Ga2O3 substrate surface was used as an embedded photomask to demonstrate the applicability of backside-exposure lithography to beta-Ga2O3 substrates. Self-aligned photoresist patterning, lift-off, and etching processes were demonstrated for an AZ5214E photoresist in both the positive and negative processing modes. The findings suggest that backside-exposure photolithography is a promising fabrication approach for future beta-Ga2O3-based devices.
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