Performance projection of multi-bias and nonlinear distortion for gallium arsenides nano-pHEMT

Intermodulation distortion tests using the two-tone technique with an extensive bias range were used to demonstrate the nonlinearity in terms of frequency for active devices like nano pHEMT based on gallium arsenide semiconductor material. It is demonstrated that the intermodulation distortion components are directly connected to the RF transconductance derivatives calculated using the two-tone test. Furthermore, it was discovered that the third-order intermodulation distortion power is lowest when the second derivative of the transconductance G(m3) is zero. To emphasize the influence of RF transconductance, a two-tone approach has been presented as an empirical, analytical explanation for this device's nonlinearity. The modeled data is demonstrated to agree with the results of the measurements, making it a helpful tool for analyzing these devices.

Automated summary

Intermodulation distortion tests were performed using the two-tone technique to investigate the frequency nonlinearity of active devices like nano pHEMT based on gallium arsenide semiconductor material. The results demonstrated a direct connection between intermodulation distortion components and RF transconductance derivatives. It was also found that the third-order intermodulation distortion power is minimized when the second derivative of the transconductance is zero.