期刊
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
卷 69, 期 12, 页码 13799-13807出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIE.2021.3128923
关键词
DC transformer; gate unit; integrated gate-commutated thyristor (IGCT); LLC converter; resonant; soft switching
资金
- European Research Council (ERC) under the European Union's Horizon 2020 Research and Innovation Programme [818706]
This article investigates the optimization and design of IGCT for the soft-switching dc transformer applications. By simplifying the driving topology and increasing the switching frequency, low power consumption and a small size of the gate unit are achieved. The experimental results validate the feasibility of IGCT in high voltage and current resonant operation.
Recently, integrated gate-commutated thyristors (IGCTs) have shown a great potential for the soft-switching dc transformer applications based on LLC resonant converter. The zero-voltage switching that is present in this converter topology enables an operation of IGCTs without clamping circuit and with significantly higher switching frequencies, while maintaining the exceptionally low conduction losses. The high voltage and current ratings of the IGCTs make them a preferred choice for an efficient bulk power transmission. This article shows how gate units for IGCTs can be optimized for this soft-switching application. It presents a simplification of the driving topology and the design process for high switching frequencies. This results in low power consumption and a very small size of the gate unit. The prototype of the gate unit is built and experimentally validated in a 2.5 kV 0.75 kA resonant operation of the IGCT.
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