期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 70, 期 2, 页码 468-472出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2022.3227523
关键词
Action potential; electrotonic potential; multilevel resistive switching; neuron-like behavior; non-volatile (NV) memory; phase-change-material; reset WORM (ReWORM); synaptic transmission; write-once-read-many (WORM)
Multilevel non-volatile resistive switching behavior is observed in electronic textile, displaying write-once-read-many (WORM) memory behavior and allowing conduction modulation using a remote current-bias write/input stimulus. Anisotropic current spreading in the textile can be utilized for selective memory writing and emulating neuron-like behavior. The textile also exhibits the reset WORM or ReWORM effect.
Multilevel non-volatile (NV) resistive switching response is reported in electronic textile. The electroconductive textile as a phase change material displayed a typical write-once-read-many (WORM) memory behavior and switched abruptly from OFF to ON under the voltage-sweep mode. Furthermore, current-sweep characterization revealed a large number of intermittent multilevel NV states. A mapping of the single active and multiple passive devices across the 2-D planar structure of the textile allowed to achieve conduction modulation using a remote current-bias write/input stimulus. A comparative study of the wale and course directions in the textile displayed an anisotropic current spreading that may be utilized for selective memory writing/emulating neuron-like behavior. In addition, the textile also displayed the reset WORM or ReWORM effect, enabling it to revert to its initial high resistive state.
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