4.6 Article

Ultrathin Indium Oxide Thin-Film Transistors With Gigahertz Operation Frequency

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Engineering, Electrical & Electronic

Realization of Maximum 2 A/mm Drain Current on Top-Gate Atomic-Layer-Thin Indium Oxide Transistors by Thermal Engineering

Pai-Ying Liao et al.

Summary: This work demonstrates record high maximum drain current of top-gate indium oxide transistors with scaled dimensions and low thermal budget. By utilizing highly resistive silicon substrate, the self-heating effect is alleviated, allowing for significantly higher drain current. Quantitative studies on the self-heating effect and channel temperature under different substrates are also presented.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

Article Engineering, Electrical & Electronic

Scaled indium oxide transistors fabricated using atomic layer deposition

Mengwei Si et al.

Summary: Researchers have successfully fabricated high-performance indium oxide transistors with dimensions smaller than advanced silicon technologies using an industry-compatible atomic layer deposition process. This study is significant for improving integrated circuit performance and functionality.

NATURE ELECTRONICS (2022)

Article Engineering, Electrical & Electronic

A Gate-All-Around In2O3 Nanoribbon FET With Near 20 mA/μm Drain Current

Zhuocheng Zhang et al.

Summary: In this study, atomic layer-deposited single-channel indium oxide gate-all-around nanoribbon field-effect transistors were demonstrated in a back-end-of-line compatible process, achieving high on-state current and on/off ratio. Short-pulse measurements were used to mitigate self-heating effects, highlighting the potential of In2O3 as an oxide semiconductor channel for monolithic 3D integration.

IEEE ELECTRON DEVICE LETTERS (2022)

Article Engineering, Electrical & Electronic

Improved Stability With Atomic-Layer-Deposited Encapsulation on Atomic-Layer In2O3 Transistors by Reliability Characterization

Adam Charnas et al.

Summary: The long-term reliability of transistors with nano-sized In2O3 channels was studied, and it was found that the parameter drift can be reduced by sequential encapsulation and V-T engineering.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

Article Chemistry, Multidisciplinary

Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current

Zehao Lin et al.

Summary: In this study, an In2O3 transistor grown by atomic layer deposition (ALD) at back-end-of-line (BEOL) compatible temperatures is demonstrated to have a record high drain current, surpassing all known transistors. Experimental and theoretical analysis reveal that high carrier density and high electron velocity contribute to the superior on-state performance in these ALD In2O3 transistors.

ACS NANO (2022)

Article Physics, Applied

Atomically thin In2O3 field-effect transistors with 1017 current on/off ratio

Adam Charnas et al.

Summary: Recent advances have led to the demonstration of high-performance atomically thin n-type indium oxide (In2O3) field-effect transistors suitable for back-end-of-line logic or memory applications. These devices have high carrier density and low off-current, providing excellent electrical characteristics for both low-power logic and memory applications.

APPLIED PHYSICS LETTERS (2021)

Article Chemistry, Multidisciplinary

Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors

Mengwei Si et al.

Summary: This work demonstrates enhancement-mode field-effect transistors using an atomically-deposited amorphous In2O3 channel with thickness as low as 0.7 nm. The controllable thickness of In2O3 at an atomic scale allows for the design of sufficient 2D carrier density in the channel, affecting threshold voltage and channel carrier density. The model of trap neutral level (TNL) explains how the Fermi level aligns in the conduction band of In2O3 due to the quantum confinement effect, as confirmed by density function theory (DFT) calculations.

NANO LETTERS (2021)

Article Physics, Applied

Enhancement-mode atomic-layer thin In2O3 transistors with maximum current exceeding 2 A/mm at drain voltage of 0.7 V enabled by oxygen plasma treatment

Adam Charnas et al.

Summary: This study demonstrates enhancement-mode operation in devices with 1.5nm atomic-layer thin In2O3 channels achieved through O-2 plasma treatment, resulting in superior performance and subthreshold swing. The findings pave the way for high-performance In2O3 transistors and circuitry.

APPLIED PHYSICS LETTERS (2021)

Article Engineering, Electrical & Electronic

Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors With Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V

Mengwei Si et al.

Summary: In this work, scaled back-end-of-line (BEOL) compatible indium oxide (In2O3) transistors with significant drain current and performance are demonstrated. The high current density is achieved by controlling channel thickness and the formation of high density 2D channel at the oxide/oxide interface.

IEEE ELECTRON DEVICE LETTERS (2021)

Article Engineering, Electrical & Electronic

Enhancement-Mode Atomic-Layer-Deposited In2O3 Transistors With Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature Annealing and Stability in Hydrogen Environment

Mengwei Si et al.

Summary: In this article, ALD indium oxide transistors with record high drain current and low-temperature annealing effects were studied. The results show that annealing in different environments significantly improves transistor performance and stability in hydrogen-rich environment.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

Article Engineering, Electrical & Electronic

Amorphous Indium-Gallium-Zinc-Oxide TFTs Patterned by Self-Aligned Photolithography Overcoming the GHz Threshold

Christian Tueckmantel et al.

IEEE ELECTRON DEVICE LETTERS (2020)

Article Engineering, Electrical & Electronic

Low Thermal Budget (<250 °C) Dual-Gate Amorphous Indium Tungsten Oxide (IWO) Thin-Film Transistor for Monolithic 3-D Integration

Wriddhi Chakraborty et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)

Article Chemistry, Physical

Nanometre-thin indium tin oxide for advanced high-performance electronics

Shengman Li et al.

NATURE MATERIALS (2019)

Article Computer Science, Hardware & Architecture

Back-End-of-Line Compatible Transistors for Monolithic 3-D Integration

Suman Datta et al.

IEEE MICRO (2019)

Proceedings Paper Engineering, Electrical & Electronic

High Performance Gigahertz Flexible Radio Frequency Transistors with Extreme Bending Conditions

Mengfei Wang et al.

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2019)

Article Engineering, Electrical & Electronic

Flexible InGaZnO TFTs With fmax Above 300 MHz

Niko Munzenrieder et al.

IEEE ELECTRON DEVICE LETTERS (2018)

Article Engineering, Electrical & Electronic

Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions

Yiming Wang et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)

Article Engineering, Electrical & Electronic

Demonstration of radio-frequency response of amorphous IGZO thin film transistors on the glass substrate

Liang-Yu Su et al.

SOLID-STATE ELECTRONICS (2015)

Article Engineering, Electrical & Electronic

High-Frequency ZnO Thin-Film Transistors on Si Substrates

Burhan Bayraktaroglu et al.

IEEE ELECTRON DEVICE LETTERS (2009)