4.6 Article

High-Speed Mid-Wave Infrared InAs/InAsSb Superlattice Uni-Traveling Carrier Photodetectors With Different Absorber Doping

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Engineering, Electrical & Electronic

Free-Space Communication With Directly Modulated Mid-Infrared Quantum Cascade Devices

Olivier Spitz et al.

Summary: This study examines the communication capabilities of two types of semiconductor lasers emitting in the 4 μm range of an atmosphere transparency window. The quantum cascade laser and interband cascade laser were used, with attenuation added to simulate free-space transmission. Different modulation formats were compared for maximum transmission data rate, and sensitivity to optical feedback and error rate were analyzed. The study provides insights into developing secure optical communication links using mid-infrared semiconductor lasers and highlights improvements needed for high-speed communication.

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2022)

Article Engineering, Electrical & Electronic

High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector Based on InAs/InAsSb Type-II Superlattice

Jian Huang et al.

Summary: A high-speed mid-wave infrared uni-traveling carrier photodiode based on InAs/InAsSb type-II superlattice was reported for the first time in this letter. The device showed promising performance and potential for applications in high-speed mid-wave infrared systems.

IEEE ELECTRON DEVICE LETTERS (2022)

Article Engineering, Electrical & Electronic

High-Speed 850 nm Photodetector for Zero-Bias Operation

Zhiyang Xie et al.

Summary: This article introduces a high-speed photodetector operating at 850 nmwavelength with zero bias. It has a large diameter and high quantum efficiency. The photodetector demonstrates a 3-dB bandwidth of 22.5 GHz and 13.3 GHz for devices with diameters of 20 μm and 40 μm, respectively. It achieves a clear eye pattern at a data rate of 25.8 Gbit/s. To the best of our knowledge, it has the highest 3-dB bandwidth among all the zero-bias 850 nm photodetectors reported so far.

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2022)

Article Instruments & Instrumentation

Mid-wave infrared p+-B-n InAs/InAsSb type-II superlattice photodetector with an AlAsSb/InAsSb superlattice barrier

Lifang She et al.

Summary: In this study, mid-wavelength infrared InAs/InAsSb type-II superlattice p(+)-B-n photodetectors are demonstrated, with the introduction of an AlAsSb/InAsSb superlattice barrier structure to reduce bias dependency. The photodetector exhibits low dark current density, high quantum efficiency, and high specific detectivity at 150K.

INFRARED PHYSICS & TECHNOLOGY (2022)

Article Engineering, Electrical & Electronic

Long and Very Long Wavelength InAs/InAsSb Superlattice Complementary Barrier Infrared Detectors

David Z. Ting et al.

Summary: By adding p-type absorber layers, the QE of the InAs/InAsSb T2SLS unipolar barrier infrared detectors was enhanced due to longer electron diffusion length. However, the presence of metallurgical and surface p-n junctions affected the dark current characteristics, and the detectors performed better under lower biasing conditions.

JOURNAL OF ELECTRONIC MATERIALS (2022)

Article Materials Science, Multidisciplinary

Free-Space Communications Enabled by Quantum Cascade Lasers

Xiaodan Pang et al.

Summary: Future generations of wireless communication systems are expected to achieve significantly faster data transmission and lower latency, with photonics-assisted technologies such as mid-IR free-space communication using semiconductor quantum cascade lasers (QCL) attracting great interest. The ability to directly modulate QCL for high-speed transmission and monolithic integration for compact transceivers make it a promising option for future wireless communications.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2021)

Article Optics

High-speed quantum cascade detector characterized with a mid-infrared femtosecond oscillator

Johannes Hillbrand et al.

Summary: Quantum cascade detectors (QCDs) based on intersubband transitions are demonstrated to have a large electrical bandwidth optimized for 4.3 μm wavelength. The impulse response of fully packaged QCDs shows a full-width at half-maximum of only 13.4 ps, corresponding to a 3-dB bandwidth of over 20 GHz, with detection capability reported up to at least 50 GHz without the need for electronic amplification.

OPTICS EXPRESS (2021)

Article Multidisciplinary Sciences

Architecture for microcomb-based GHz-mid-infrared dual-comb spectroscopy

Chengying Bao et al.

Summary: The authors present a microcomb-based dual-comb spectroscopy sensor with GHz resolution for mid-infrared gas sensing. The system stability is determined by a single high-Q microresonator, making it simplified and eliminating the need for external frequency locking. The methane and ethane spectra can be measured over short intervals as 0.5 ms, showing potential for chip-based architectures in mid-IR gas sensors for various applications.

NATURE COMMUNICATIONS (2021)

Article Computer Science, Information Systems

Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array

Yan Teng et al.

Summary: In this study, a long-wavelength infrared InAs/GaSb superlattice FPA grown by MOCVD demonstrated clear images and high-quality material. The single element detectors showed a 50% cut-off wavelength of around 10.1 μm, with a dark current density of 2.5 x 10(-5) A/cm(2) and a peak detectivity of 1.7 x 10(11) cm·Hz(1/2)/W at 80 K.

IEEE ACCESS (2021)

Article Physics, Applied

Uni-traveling-carrier photodiodes

Tadao Ishibashi et al.

JOURNAL OF APPLIED PHYSICS (2020)

Article Physics, Applied

Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material

Lilian K. Casias et al.

APPLIED PHYSICS LETTERS (2020)

Article Engineering, Electrical & Electronic

High Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector

Jian Huang et al.

IEEE JOURNAL OF QUANTUM ELECTRONICS (2020)

Article Engineering, Electrical & Electronic

InP-Based Near Infrared/Extended-Short Wave Infrared Dual-Band Photodetector

Zongheng Xie et al.

IEEE PHOTONICS TECHNOLOGY LETTERS (2020)

Article Instruments & Instrumentation

High performance InAs/InAsSb Type-II superlattice mid-wavelength infrared photodetectors with double barrier

Donghai Wu et al.

INFRARED PHYSICS & TECHNOLOGY (2020)

Article Optics

Mid-infrared dual-comb spectroscopy with interband cascade lasers

Lukasz A. Sterczewski et al.

OPTICS LETTERS (2019)

Proceedings Paper Optics

Free space optical communications based on Quantum Cascade Lasers

Alexandre Delga et al.

QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XVI (2019)

Article Physics, Applied

Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices

Y. Aytac et al.

JOURNAL OF APPLIED PHYSICS (2016)

Article Engineering, Electrical & Electronic

High-Power Flip-Chip Bonded Photodiode With 110 GHz Bandwidth

Qinglong Li et al.

JOURNAL OF LIGHTWAVE TECHNOLOGY (2016)

Article Multidisciplinary Sciences

Dual-comb spectroscopy based on quantum-cascade-laser frequency combs

Gustavo Villares et al.

NATURE COMMUNICATIONS (2014)

Article Physics, Applied

Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

H. S. Kim et al.

APPLIED PHYSICS LETTERS (2012)

Article Engineering, Electrical & Electronic

High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer

Zhi Li et al.

IEEE JOURNAL OF QUANTUM ELECTRONICS (2010)