Enhanced Resistive Switching in Flexible Hybrid RRAM Devices With PVK:MoS2/TiO2 Bilayer

High-performance flexible resistive random access memory (RRAM) devices were demonstrated by engineering the switching layer with PVK:MoS2 composite and TiO(2 )bilayer. These flexible RRAM devices exhibited excellent switching with low SET (1.2 V) and RESET (-1.5 V) voltages, a high repeatability of 1000 cycles, and an excellent retention time of 5000 s with an ON/OFF current ratio more than 10(2) at a read voltage of 0.2 V, significantly better than neat PVK/TiO2 devices. Moreover, devices with PVK:MoS2/TiO2 bilayer exhibited high stability upon bending with radii up to 7 mm for 100 cycles. Our results indicate that PVK:MoS2/TiO2 composite bilayer can be a promising switching layer candidate for high-performance flexible RRAM devices.

Automated summary

High-performance flexible resistive random access memory (RRAM) devices were achieved by engineering the switching layer with PVK:MoS2 composite and TiO2 bilayer. These devices demonstrated excellent switching performance, high repeatability, and retention time, and maintained high stability even under bending conditions.