Chemical Solution Deposition of MTiO3(M = Ca, Sr, and Ba) Based Buffer Layer Prior to Coated Conductors Architectures

Chemical solution deposition (CSD) approach was introduced in this work to simplify and to optimize the trifluoracetic based MTiO3 (MTO, M = Ca, Sr, and Ba) precursor solution, leading to the high shelf-life and the purity. Growing these MTO solutions on (100) LaAlO3 single-crystal substrates yields (h00) oriented and dense MTO buffer layers. Whereas it is clear that the roughness of MTO films and the lattice mismatch between MTO buffer layer and superconducting YBa2Cu3O7-delta film is crucial for the film formation.

Automated summary

Chemical solution deposition (CSD) approach was used to simplify and optimize the trifluoracetic based MTiO3 precursor solution, resulting in high shelf-life and purity. The growth of MTO solutions on (100) LaAlO3 single-crystal substrates produced (h00) oriented and dense MTO buffer layers. However, the roughness of MTO films and the lattice mismatch between MTO buffer layer and superconducting YBa2Cu3O7-delta film are crucial for film formation.