21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics With a Novel Drive Mode

Sensitivity (S) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni-(50 nm)-Au-(100nm)/Ga2O3/p-Si vertical MOS type diode, using the measured capacitance-voltage (C-m-V) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.

Automated summary

This study experimentally demonstrates that the highest sensitivity value (21.2 mV/K) of the Ni-(50 nm)-Au-(100nm)/Ga2O3/p-Si vertical MOS type diode in temperature sensing can be obtained by using the constant capacitance mode at 1 nF, which is higher than the results reported in the literature except in the cryogenic temperature region and near room temperature.