Effect of Si+ Ion Implantation in α-Ga2O3 Films on Their Gas Sensitivity

The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) alpha-Ga2O3 films grownby halide vapor phaseepitaxy (HVPE) hasbeen studied. It is established that irradiation with a dose of 8 x 10(12) - 8 x 10(15) cm(-2) at an energy of 100 keV followed by postimplantation annealing increases the response of alpha-Ga2O3 films to 3 vol% of H-2 by 43 times at 400 degrees C, reduces the response time by a factor of 6, and expands the operating temperature range down to 30 degrees C. In addition, alpha-Ga2O3 layers irradiated with a Si+ ion dose of 8 x 10(13) - 8 x 10(15) cm(-2) demonstrate high sensitivity to CO and NH3 gases. The mechanism of Si+ ion irradiationeffecton the gas-sensingpropertiesof alpha-Ga2O3 structures is proposed.

Automated summary

The effect of Si+ ion implantation on the gas-sensing properties of (0001) alpha-Ga2O3 films grown by HVPE has been investigated. The results show that irradiation with a dose of 8 x 10(12) - 8 x 10(15) cm(-2) at an energy of 100 keV followed by postimplantation annealing significantly enhances the response of alpha-Ga2O3 films to 3 vol% of H-2 at 400 degrees C, reduces the response time by a factor of 6, and extends the operating temperature range to 30 degrees C. Additionally, alpha-Ga2O3 layers irradiated with a Si+ dose of 8 x 10(13) - 8 x 10(15) cm(-2) exhibit high sensitivity to CO and NH3 gases. A mechanism for the effect of Si+ ion irradiation on the gas-sensing properties of alpha-Ga2O3 structures is proposed.