期刊
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
卷 32, 期 11, 页码 1315-1318出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2022.3189607
关键词
6G; III-V devices; D-band; integrated circuits (ICs); low-noise amplifier (LNA); millimeter wave circuits; wideband
This letter presents a D-band low-noise amplifier (LNA) in 250-nm InP HBT technology for the next-generation wireless applications. The LNA demonstrates high gain and wide bandwidth in the frequency range, and substrate wave suppression techniques have been employed.
This letter presents a D-band low-noise amplifier (LNA) in 250-nm InP HBT technology for the next-generation wireless applications. The LNA has a measured peak gain of 13 dB, a 3-dB bandwidth greater than 20 GHz (120-140 GHz), and a measured noise figure (NF) of less than 6 dB in the band. A reduction in the 3-dB bandwidth from simulation was observed during the measurements which was attributed to the substrate waves using full chip electromagnetic (EM) simulation. EM simulations show that a partial or complete removal of the back side metallization of the InP substrate, holes in metal-1 ground plane, or a strategic placement of through-substrate vias suppress these substrate waves. To the authors' knowledge, this is the first 120-140-GHz LNA in the InP 250-nm HBT technology.
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