All-Optical Phase Memory Circuit Based on Two Coupled Lasers and External Optical Injection

We propose a volatile static all-optical memory capable of storing phase information of a slowly-varying electric field. The scheme and its realization (a memory circuit) are based on two mutually coupled lasers subject to external optical injection. The proposed circuit has a single optical input for write and hold operations and two opposite-sign outputs for reading the memory. The proposed circuit operates with a single wavelength of light, a single direction of propagation, and without a need to switch the state of polarization. We prove mathematically that the proposed arrangement has equilibrium points that may discreetly quantify and store the phase in a bistable manner. The circuit is studied numerically for solid-state and semiconductor lasers with zero and non-zero linewidth enhancement factors, respectively. Simulations based on a rate equation system confirm the essential findings. Using typical parameters of a semiconductor laser and optimizing for a possibly wide range of operation, the write-read operations were simulated using PRBS-9 at the rate of 1 Gb/s with negligible errors. The proposed circuit will enable integrated memory implementations for future all-optical signal processing and computing systems.

Automated summary

We propose a volatile static all-optical memory based on two mutually coupled lasers subject to external optical injection, capable of storing phase information of a slowly-varying electric field. The circuit has a single optical input for write and hold operations and two opposite-sign outputs for reading the memory. Numerical simulations confirm its feasibility and show potential for integrated memory implementations in future all-optical signal processing and computing systems.