Forming-Free, Self-Compliance WTe2-Based Conductive Bridge RAM With Highly Uniform Multilevel Switching for High-Density Memory

In this work, forming-free and self-limited resistive switching characteristics are demonstrated in the transition-metal-chalcogenide-based conductive bridge RAM devices. Owing to the choice of a suitable solid electrolyte, the proposed WTe2-based devices present excellent switching characteristics offering highly desirable attributes such as high pulse endurance (> 2 x 10(7) cycles) and stable data retention (10 years at 72 degrees C). The devices also present excellent device-to-device and cycle-to-cycle uniformity which is highly desirable for the practical implementation of resistive random access memory (RRAM) devices in large crossbar arrays. The demonstration of robust and highly repeatable multilevel switching further provides multibit data storage capability for high-density memory.

Automated summary

This work demonstrates resistive switching characteristics in conductive bridge RAM devices based on transition-metal chalcogenides, which are forming-free and self-limited. By using a suitable solid electrolyte, the proposed WTe2-based devices show excellent switching characteristics, including high pulse endurance (> 2 x 10(7) cycles) and stable data retention (10 years at 72 degrees C). The devices also exhibit good device-to-device and cycle-to-cycle uniformity, making them suitable for practical implementation in large crossbar arrays.