RF Enhancement-Mode p-GaN Gate HEMT on 200 mm-Si Substrates

Enhancement-mode (E-mode) submicron 0.45-mu m p-GaN gate HEMTs on 200-mm high-resistivity-Si (HRS) substrates have been demonstrated with high uniformity and high overall combined performance for RF applications. The p-GaN gate HEMT exhibits a positive threshold voltage (V-TH) of +0.58 V at I-D of 0.1 mA/mm, a peak transconductance (G(M)) of 150 mS/mm, high saturation current density of 630 mA/mm at a gate bias (V-GS) of 6 V and >1 A/mm at a V-GS of 11 V. A low OFF state leakage current of 1.5 mu A/mm is obtained at a V-DS of 48 V with a forward OFF-state breakdown voltage larger than 65 V. The device exhibits a current gain cut-off frequency f(T) of 22.4 GHz, and a power gain cut-off frequency f(MAX) of 45.3 GHz. At 5 GHz, large-signal load-pull measurement yields an output power density of 1.4 W/mm and a power added efficiency up to 55.4 % with a drain voltage less than 20 V.

Automated summary

Enhancement-mode (E-mode) submicron 0.45-μm p-GaN gate HEMTs on 200-mm high-resistivity-Si (HRS) substrates have been demonstrated with high uniformity and high overall combined performance for RF applications. The p-GaN gate HEMT exhibits positive threshold voltage, high transconductance, and high saturation current density. It also shows low OFF state leakage current, high breakdown voltage, and high cut-off frequencies. Additionally, it achieves high power output and efficiency at 5 GHz.