InGaN Color Tunable Full Color Passive Matrix

A single material solution to a full color micro light emitting diode (mu LED) display has remained elusive dueto distinct material differences of each color, along with the difficulties of integration. To address this an Indium Gallium Nitride (InGaN) passive matrix array is fabricated with color tunable mu LEDs from red at 640 nm to blue at 425 nm. The presented arrays build upon the initial work with V-groove color tunable mu LEDs to explore applications in displays. Initial 5 x 5 arrays of 20 mu m(2) mu LEDs are fabricated through etching the Gallium Nitride (GaN) down to the sapphire substrate to form electrically isolated n-GaN columns with mu LEDs, while a spacer dielectric and indium tin oxide (ITO) layer form the anode rows. Color tunability and color mixing were demonstrated, where a single mu LED can act as a complete pixel. Different emission colors were demonstrated from the array including red, yellow, green, and blue. This work forms the basis on which V-groove technology can further expand into mu LED displays to solve the problem of a single material solution.

Automated summary

A color tunable micro light emitting diode (mu LED) array is fabricated using Indium Gallium Nitride (InGaN) to address the challenges of material differences and integration. This work provides the basis for the application of V-groove color tunable mu LEDs in displays.